MRF7S18170HR3 Freescale Semiconductor, MRF7S18170HR3 Datasheet - Page 10

• Manufacturer Part Number: MRF7S18170HR3
• Description: TRANSISTOR RF LDMOS NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18170HR3

• Transistor Type: LDMOS
• Frequency: 1.81GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF7S18170HR3 MRF7S18170HSR3
10
18
17
16
15
14
0.0001
0.001
0.01
0
100
0.1
10
1
Figure 14. Power Gain versus Output Power
64 DPCH, 50% Clipping, Single - Carrier Test Signal
0
Figure 16. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
P
out
2
, OUTPUT POWER (WATTS) CW
100
PEAK−TO−AVERAGE (dB)
4
V
DD
= 24 V
200
6
I
f = 1840 MHz
Input Signal
DQ
28 V
TYPICAL CHARACTERISTICS
= 1400 mA
W - CDMA TEST SIGNAL
8
32 V
300
10
10
10
10
10
Figure 15. MTTF Factor versus Junction Temperature
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
8
7
6
5
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
−9
Figure 17. Single - Carrier W - CDMA Spectrum
−7.2
110
−ACPR in 3.84 MHz
Integrated BW
−5.4
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
−3.6
150
f, FREQUENCY (MHz)
−1.8
out
Channel BW
3.84 MHz
170
= 50 W Avg., and η
0
Freescale Semiconductor
190
1.8
−ACPR in 3.84 MHz
Integrated BW
3.6
210
RF Device Data
D
= 31%.
5.4
230
7.2
250
9