MRF7S18170HR3 Freescale Semiconductor, MRF7S18170HR3 Datasheet - Page 12

• Manufacturer Part Number: MRF7S18170HR3
• Description: TRANSISTOR RF LDMOS NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18170HR3

• Transistor Type: LDMOS
• Frequency: 1.81GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF7S18170HR3 MRF7S18170HSR3
12
60
59
58
57
56
55
54
53
52
51
50
32
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 52.8 dBm (190 W)
P3dB = 53.8 dBm (240 W)
33
Figure 19. Pulsed CW Output Power
3dB
34
Test Impedances per Compression Level
35
versus Input Power
P
1.23 - j7.91
P6dB = 54.1 dBm (257 W)
36
in
, INPUT POWER (dBm)
Z
source
Ω
37
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
38
V
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1840 MHz
DD
39
= 28 Vdc, I
40
0.88 - j2.81
Z
41
load
Ω
DQ
= 1400 mA
42
Ideal
Actual
43
44
61
60
59
58
57
56
55
54
53
52
51
32
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 54.05 dBm
(254.1 W)
P3dB = 54.65 dBm (290 W)
33
P3dB
Figure 20. Pulsed CW Output Power
34
Test Impedances per Compression Level
35
versus Input Power
P
P6dB = 55 dBm (316.23 W)
1.23 - j7.91
36
in
, INPUT POWER (dBm)
Z
source
Ω
37
38
V
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1840 MHz
Freescale Semiconductor
DD
39
= 32 Vdc, I
40
1.03 - j2.65
Z
41
load
RF Device Data
Ω
DQ
= 1400 mA
42
Ideal
Actual
43
44