MRF6V14300HR3 Freescale Semiconductor, MRF6V14300HR3 Datasheet

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MRF6V14300HR3

Manufacturer Part Number
MRF6V14300HR3
Description
MOSFET RF N-CH 50V NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V14300HR3

Transistor Type
N-Channel
Frequency
1.4GHz
Gain
18dB
Voltage - Rated
100V
Current Rating
10µA
Current - Test
150mA
Voltage - Test
50V
Power - Output
330W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V14300HR3
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
• Typical Pulsed Performance: V
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
RF Power transistors designed for applications operating at frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300
Duty Cycle = 12%
Power
Operation
Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Power Gain — 18 dB
Drain Efficiency — 60.5%
calculators by product.
Select Documentation/Application Notes -- AN1955.
(1,2)
Characteristic
DD
Rating
= 50 Volts, I
DD
Operation
DQ
= 150 mA, P
out
=
μ
sec,
Symbol
Symbol
V
Z
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRF6V14300H
C
J
MRF6V14300HR3 MRF6V14300HSR3
MRF6V14300HSR3
CASE 465- -06, STYLE 1
MRF6V14300HR3
CASE 465A- -06, STYLE 1
MRF6V14300HR3
MRF6V14300HSR3
LATERAL N- -CHANNEL
1400 MHz, 330 W, 50 V
RF POWER MOSFETs
NI- -780
NI- -780S
-- 65 to +150
--0.5, +100
Value
--6.0, +10
Value
PULSED
0.13
150
225
(2,3)
Rev. 3, 4/2010
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6V14300HR3 Summary of contents

Page 1

... LATERAL N- -CHANNEL RF POWER MOSFETs CASE 465- -06, STYLE 1 NI- -780 MRF6V14300HR3 CASE 465A- -06, STYLE 1 NI- -780S MRF6V14300HSR3 Symbol Value Unit V --0.5, +100 Vdc DSS V --6.0, +10 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit Z 0.13 °C/W θJC MRF6V14300HR3 MRF6V14300HSR3 1 ...

Page 2

... Harmonic 2nd and 3rd Spurious Response Load Mismatch Stability (VSWR = 3:1 at all Phase Angles) Load Mismatch Tolerance (VSWR = 5:1 at all Phase Angles) 1. Part internally matched both on input and output. 2. Drain efficiency is calculated by: η MRF6V14300HR3 MRF6V14300HSR3 2 = 25°C unless otherwise noted) A Symbol I GSS V (BR)DSS I ...

Page 3

... Microstrip Z10 0.058″ x 0.254″ Microstrip Z11 0.344″ x 0.087″ Microstrip Z12 0.110″ x 0.087″ Microstrip Figure 1. MRF6V14300HR3(HSR3) Test Circuit Schematic Table 5. MRF6V14300HR3(HSR3) Test Circuit Component Designations and Values Part Chip Capacitor Chip Capacitor Chip Capacitor ...

Page 4

... Figure 2. MRF6V14300HR3(HSR3) Test Circuit Component Layout MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300 Rev Device Data Freescale Semiconductor ...

Page 5

... Figure 8. Pulsed Power Gain versus P = 300 W out P = 270 W out P = 330 W out = 150 DUTY CYCLE (%) Ideal Actual Vdc 150 mA 1400 MHz DD DQ Pulse Width = 300 μsec, Duty Cycle = 12 INPUT POWER (dBm) PULSED in Input Power 100 , OUTPUT POWER (WATTS) PULSED out Output Power MRF6V14300HR3 MRF6V14300HSR3 20 39 400 5 ...

Page 6

... P , INPUT POWER (WATTS) PULSED in Figure 9. Pulsed Output Power versus Input Power 1200 Figure 11. Broadband Performance @ MRF6V14300HR3 MRF6V14300HSR3 6 TYPICAL CHARACTERISTICS 24 25_C 22 85_C T = --30_C C 25_C 20 85_C 55_C 18 = 150 mA 1400 MHz Figure 10. Pulsed Power Gain and Drain Efficiency G ps η D IRL Vdc 150 mA 330 W Peak (39.6 W Avg.) ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Network Test Z Z source load Z load Ω Output Matching Network MRF6V14300HR3 MRF6V14300HSR3 7 ...

Page 8

... (INSULATOR) bbb M N (LID) ccc (FLANGE (FLANGE (LID (FLANGE) D bbb (LID) ccc M M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF6V14300HR3 MRF6V14300HSR3 8 PACKAGE DIMENSIONS Q bbb (LID ccc (INSULATOR) aaa SEATING CASE 465- -06 PLANE ISSUE G NI- -780 MRF6V14300HR3 Z R (LID ccc (INSULATOR) aaa ...

Page 9

... MTTF” footnote added • Reporting of pulsed thermal data now shown using the Z • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description symbol θJC MRF6V14300HR3 MRF6V14300HSR3 9 ...

Page 10

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6V14300HR3 MRF6V14300HSR3 Document Number: MRF6V14300H Rev. 3, 4/2010 10 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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