MRF6VP121KHSR6 Freescale Semiconductor, MRF6VP121KHSR6 Datasheet - Page 6

• Manufacturer Part Number: MRF6VP121KHSR6
• Description: MOSFET RF N-CH 50V NI-1230S
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP121KHSR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.03GHz
• Gain: 20dB
• Voltage - Rated: 110V
• Current Rating: 100µA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: NI-1230S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF6VP121KHR6 MRF6VP121KHSR6
1000
21.5
20.5
19.5
18.5
100
23
22
21
20
19
18
17
16
10
22
21
20
19
18
1
Figure 4. Capacitance versus Drain- -Source Voltage
500
0
0
I
Pulse Width = 128 μsec
Duty Cycle = 10%
DQ
Note: Each side of device measured separately.
V
I
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
DQ
DD
= 150 mA, f = 1030 MHz
600
= 150 mA
P1dB = 1065 W (60.3 dBm)
200
C
= 50 Vdc
Figure 8. Pulsed Power Gain versus
C
Figure 6. Pulsed Power Gain versus
rss
oss
V
10
P
V
P
DD
out
DS
out
700
, OUTPUT POWER (WATTS) PULSED
= 30 V
400
, DRAIN--SOURCE VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS) PULSED
P3dB = 1182 W (60.7 dBm)
Output Power
800
Measured with ±30 mV(rms)ac @ 1 MHz
V
Output Power
GS
35 V
20
600
= 0 Vdc
900
40 V
800
30
1000
1000
45 V
1100
C
TYPICAL CHARACTERISTICS
iss
Ideal
40
1200
50 V
1200
Actual
1400
1300
50
22
21
20
19
18
17
16
Figure 5. Pulsed Power Gain and Drain Efficiency
1
25
24
23
22
21
20
19
18
17
16
V
I
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
DQ
65
60
55
50
45
40
DD
1
20
= 150 mA
= 50 Vdc
85_C
I
DQ
P
Figure 9. Pulsed Output Power versus
Figure 7. Pulsed Power Gain versus
out
10
= 6000 mA
, OUTPUT POWER (WATTS) PULSED
3000 mA
1500 mA
750 mA
375 mA
P
150 mA
25
versus Output Power
25_C
out
T
10
C
, OUTPUT POWER (WATTS) PULSED
P
= --30_C
in
, INPUT POWER (dBm) PULSED
Output Power
100
Input Power
30
η
G
D
ps
100
V
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
DD
Freescale Semiconductor
= 50 Vdc
35
1000
V
I
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
DQ
DD
= 150 mA
= 50 Vdc
1000
RF Device Data
40
10000
60
50
40
30
20
10
10000
0
45