MRF6VP121KHSR6 Freescale Semiconductor, MRF6VP121KHSR6 Datasheet
MRF6VP121KHSR6
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MRF6VP121KHSR6 Summary of contents
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... CASE 375E- -04, STYLE 1 NI- -1230S MRF6VP121KHSR6 PARTS ARE PUSH- -PULL inA GSA outA inB GSB outB (Top View) Figure 1. Pin Connections Symbol Value Unit V --0.5, +110 Vdc DSS V --6.0, +10 Vdc +150 °C stg T 150 ° 225 °C J MRF6VP121KHR6 MRF6VP121KHSR6 /V DSA /V DSB 1 ...
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push--pull configuration. MRF6VP121KHR6 MRF6VP121KHSR6 2 = 150 25°C unless otherwise noted) A ...
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... Vdc 150 mA 1000 out — 18.9 — dB — 57.8 — % — --16.6 — Vdc 150 mA 1000 out — 19.8 — dB — 59.0 — % — 0.21 — Vdc 150 mA 1000 out — 21.4 — dB — 56.3 — % — --25.3 — dB MRF6VP121KHR6 MRF6VP121KHSR6 3 ...
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... Variable Capacitors C13, C14, C15 5.1 pF Chip Capacitors C22, C26 0.022 μF, 100 V Chip Capacitors C23, C24, C27, C28 470 μ Electrolytic Capacitors L1, L2 Inductors 3 Turn R1, R2 1000 Ω, 1/4 W Chip Resistors MRF6VP121KHR6 MRF6VP121KHSR6 4 C4 C13 R1 Z11 Z13 Z15 ...
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... C1 C2 BALUN 1 C10 C11 Figure 3. MRF6VP121KHR6(HSR6) Test Circuit Component Layout RF Device Data Freescale Semiconductor MRF6VP121KH Rev C22 C4 C21 C13 R1 L1 C12 C16 C15 L2 R2 C14 C8 C26 C25 C7 C24 C23 -- BALUN 2 C17 C18 C19 C20 C27 -- C28 MRF6VP121KHR6 MRF6VP121KHSR6 5 ...
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... MHz DQ Pulse Width = 128 μsec 22 Duty Cycle = 10 200 400 600 800 P , OUTPUT POWER (WATTS) PULSED out Figure 8. Pulsed Power Gain versus Output Power MRF6VP121KHR6 MRF6VP121KHSR6 6 TYPICAL CHARACTERISTICS Vdc 150 mA iss 1030 MHz Pulse Width = 128 μsec 20 Duty Cycle = 10 out Figure 5 ...
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature - - 10000 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Vdc 1000 W Peak, Mode--S Pulse Train, DD out = 59%. D Mode- -S MRF6VP121KHR6 MRF6VP121KHSR6 250 7 ...
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... Input Matching Network Figure 13. Series Equivalent Source and Load Impedance MRF6VP121KHR6 MRF6VP121KHSR6 Ω 1030 MHz Z load f = 1030 MHz Z source Vdc 150 mA 1000 W Peak DD DQ out source MHz Ω 1030 3.93 + j0.09 1.54 + j1. Test circuit impedance as measured from source gate to gate, balanced configuration. ...
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... ATC100B100JT500XT ATC100B5R1CT500XT C1825C223K1GAC MCGPR63V477M13X26--RH GA3094--ALC CRCW12061K00FKEA = 2.55 250GX--0300--55--22 r C26 C25 C24 L1 BALUN 2 C19 C20 C21 C22 C28 -- C29 C30 Part Number Anaren AVX Kemet Kemet ATC ATC Johanson ATC ATC ATC Kemet Multicomp Coilcraft Vishay Arlon MRF6VP121KHR6 MRF6VP121KHSR6 9 ...
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... TYPICAL CHARACTERISTICS — 785 MHZ 20 785 MHz 19.5 Pulse Width = 128 μsec 19 Duty Cycle = 10% 18.5 18 17.5 17 16.5 16 15.5 10 Figure 15. Pulsed Power Gain and Drain Efficiency MRF6VP121KHR6 MRF6VP121KHSR6 Vdc DD = 150 η D 100 1000 P , OUTPUT POWER (WATTS) PULSED out versus Output Power 3000 ...
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... Z source MHz Ω 785 1.54 -- j0.46 2.79 + j1. Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured from load drain to drain, balanced configuration. Device + Under -- Test -- + Z Z source load Z load Ω Output Matching Network MRF6VP121KHR6 MRF6VP121KHSR6 11 ...
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... Chip Capacitors C29 C22, C26 0.022 μF, 100 V Chip Capacitors C23, C24, C27, C28 470 μ Electrolytic Capacitors L1, L2 Inductors 3 Turn R1, R2 1000 Ω, 1/4 W Chip Resistors PCB CuClad, 0.030″, ε MRF6VP121KHR6 MRF6VP121KHSR6 12 MRF6VP121KH Rev C21 C4 C13 R1 L1 C16 C12 ...
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... TYPICAL CHARACTERISTICS — 1090 MHZ Figure 18. Pulsed Power Gain and Drain Efficiency RF Device Data Freescale Semiconductor Vdc 150 1090 MHz Pulse Width = 128 μsec Duty Cycle = 10 η 100 P , OUTPUT POWER (WATTS) PULSED out versus Output Power 1000 3000 MRF6VP121KHR6 MRF6VP121KHSR6 13 ...
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... Input Matching Network Figure 19. Series Equivalent Source and Load Impedance — 1090 MHz MRF6VP121KHR6 MRF6VP121KHSR6 Ω 1090 MHz f = 1090 MHz Z source Z load Vdc 150 mA 1000 W Peak DD DQ out source MHz Ω 1090 2.98 + j3.68 1.51 + j2. Test circuit impedance as measured from source gate to gate, balanced configuration ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6VP121KHR6 MRF6VP121KHSR6 15 ...
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... MRF6VP121KHR6 MRF6VP121KHSR6 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6VP121KHR6 MRF6VP121KHSR6 17 ...
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... MRF6VP121KHR6 MRF6VP121KHSR6 18 RF Device Data Freescale Semiconductor ...
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... Added Fig. 12, MTTF versus Junction Temperature -- 1030 MHz Mode-- Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added Device Data Freescale Semiconductor REVISION HISTORY Description symbol θJC MRF6VP121KHR6 MRF6VP121KHSR6 19 ...
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... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6VP121KHR6 MRF6VP121KHSR6 Document Number: MRF6VP121KH Rev. 3, 4/2010 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...