MRF6VP41KHSR6 Freescale Semiconductor, MRF6VP41KHSR6 Datasheet

MOSFET RF N-CH 1000W NI1230S

MRF6VP41KHSR6

Manufacturer Part Number
MRF6VP41KHSR6
Description
MOSFET RF N-CH 1000W NI1230S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6VP41KHSR6

Transistor Type
2 N-Channel (Dual)
Frequency
450MHz
Gain
20dB
Voltage - Rated
110V
Current Rating
5mA
Current - Test
150mA
Voltage - Test
50V
Power - Output
1000W
Package / Case
NI-1230S
Drain Source Voltage Vds
110V
Continuous Drain Current Id
5mA
Power Dissipation Pd
1kW
Operating Temperature Range
-65°C To +150°C
Rf Transistor Case
375E
No. Of Pins
4
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
200W
Power Gain (typ)@vds
20.1dB
Frequency (min)
10MHz
Frequency (max)
500MHz
Package Type
NI-1230S
Pin Count
5
Input Capacitance (typ)@vds
506@50VpF
Output Capacitance (typ)@vds
147@50VpF
Reverse Capacitance (typ)
3.3@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
67%
Mounting
Surface Mount
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6VP41KHSR6
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
500 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Designed primarily for pulsed wideband applications with frequencies up to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
P
Duty Cycle = 20%
Power
Operation
Derate above 25°C
out
Power Gain — 20 dB
Drain Efficiency — 64%
MTTF calculators by product.
= 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
C
= 25°C
(1,2)
Rating
DD
Operation
DD
= 50 Volts, I
DQ
= 150 mA,
Symbol
V
V
CW
T
T
DSS
T
GS
stg
RF
RF
C
J
CASE 375E- -04, STYLE 1
Document Number: MRF6VP41KH
CASE 375D- -05, STYLE 1
inA
inB
MRF6VP41KHR6 MRF6VP41KHSR6
MRF6VP41KHSR6
MRF6VP41KHSR6
/V
/V
MRF6VP41KHR6
MRF6VP41KHR6
10- -500 MHz, 1000 W, 50 V
GSA
GSB
Figure 1. Pin Connections
LATERAL N- -CHANNEL
NI- -1230S
PARTS ARE PUSH- -PULL
RF POWER MOSFETs
NI- -1230
3
4
-- 65 to +150
BROADBAND
--0.5, +110
--6, +10
Value
1107
(Top View)
150
225
4.6
Rev. 5, 4/2010
1
2 RF
RF
W/°C
outA
outB
Unit
Vdc
Vdc
°C
°C
°C
W
/V
/V
DSA
DSB
1

Related parts for MRF6VP41KHSR6

MRF6VP41KHSR6 Summary of contents

Page 1

... CASE 375E- -04, STYLE 1 NI- -1230S MRF6VP41KHSR6 PARTS ARE PUSH- -PULL inA GSA outA inB GSB outB (Top View) Figure 1. Pin Connections Symbol Value Unit V --0.5, +110 Vdc DSS V --6, +10 Vdc +150 °C stg T 150 ° 225 ° 1107 W 4.6 W/°C MRF6VP41KHR6 MRF6VP41KHSR6 /V DSA /V DSB 1 ...

Page 2

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push--pull configuration. MRF6VP41KHR6 MRF6VP41KHSR6 2 = 25°C unless otherwise noted) A Symbol I ...

Page 3

... A Symbol G ps η D IRL G ps η D IRL Min Typ Max = 50 Vdc 150 mA 1000 out — 20.1 — — 67 — — --10.2 — Vdc 150 mA 1000 W Peak DD DQ out — 19.5 — — 66 — — --23 — MRF6VP41KHR6 MRF6VP41KHSR6 Unit ...

Page 4

... Chip Capacitor C26, C31 2.2 μF, 100 V Chip Capacitors C29, C30, C35, C36 330 μ Electrolytic Capacitors Coax1 Ω Semi Rigid Coax, 2.2″ Long L1, L2 2.5 nH, 1 Turn Inductors L3 nH, 10 Turn Inductors MRF6VP41KHR6 MRF6VP41KHSR6 4 L3 C25 Z14 Z12 Z16 Z18 ...

Page 5

... Figure 3. MRF6VP41KHR6(HSR6) Test Circuit Component Layout — 450 MHz RF Device Data Freescale Semiconductor C27 MRF6VP41KH Rev C25 L1 C7 C10 C8 C9 C15 C32 C14 C13 C29 C30 C28 C26 COAX3 L3 C22 C23 C18 C19 C16 C17 C20 C21 C24 L4 COAX4 C31 C35 C36 C33 C34 MRF6VP41KHR6 MRF6VP41KHSR6 5 ...

Page 6

... Vdc 450 MHz 18 150 mA Pulse Width = 100 μsec Duty Cycle = 20 100 P , OUTPUT POWER (WATTS) PULSED out Figure 8. Pulsed Power Gain versus Output Power MRF6VP41KHR6 MRF6VP41KHSR6 6 TYPICAL CHARACTERISTICS 100 Note: Each side of device measured separately η ...

Page 7

... Figure 14. MTTF versus Junction Temperature — --30_C C 85_C 25_C G ps η 100 1000 2000 P , OUTPUT POWER (WATTS) PULSED out versus Output Power 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Vdc 1000 W CW, and η = 67%. DD out D MRF6VP41KHR6 MRF6VP41KHSR6 100 230 250 7 ...

Page 8

... Input Matching Network Figure 15. Series Equivalent Source and Load Impedance — 450 MHz MRF6VP41KHR6 MRF6VP41KHSR6 Ω 450 MHz Z source Z load Vdc 150 mA 1000 W Peak DD DQ out source MHz Ω 450 0.86 + j1.06 1.58 + j1. Test circuit impedance as measured from source gate to gate, balanced configuration. ...

Page 9

... Copper Wire = 2.55 DS2655 C20 C22 L3 C18 COAX3 C14 C13 C15 C16 C17 COAX4 L4 C19 C21 C23 Part Number Manufacturer Fair--Rite Precision Tube Company ATC Johanson ATC Kemet Kemet AVX Illinois Cap CDE ATC ATC Multicomp Coilcraft Freescale DS Electronics MRF6VP41KHR6 MRF6VP41KHSR6 9 ...

Page 10

... Input Matching Network Figure 17. Series Equivalent Source and Load Impedance — 352.2 MHz MRF6VP41KHR6 MRF6VP41KHSR6 352.2 MHz Z source f = 352.2 MHz Z load Ω Vdc 150 mA 1000 out source MHz Ω 352.2 0.5 + j6.5 2.9 + j6. Test circuit impedance as measured from source gate to gate, balanced configuration. ...

Page 11

... C26 COAX3 L3 C22 C23 C18 C19 C20 C21 C24 L4 COAX4 C31 C35 C36 C33 C34 Part Number Manufacturer Fair--Rite Micro--Coax Illinois Kemet Kemet Kemet ATC Johanson Components ATC ATC ATC ATC ATC ATC ATC Multicomp Coilcraft Coilcraft MRF6VP41KHR6 MRF6VP41KHSR6 11 ...

Page 12

... Input Matching Network Figure 19. Series Equivalent Source and Load Impedance — 500 MHz MRF6VP41KHR6 MRF6VP41KHSR6 Ω 500 MHz Z load Z source Vdc 150 mA 1000 W Peak DD DQ out source MHz Ω 500 0.75 + j0.5 1.73 + j0. Test circuit impedance as measured from source gate to gate, balanced configuration. ...

Page 13

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6VP41KHR6 MRF6VP41KHSR6 13 ...

Page 14

... MRF6VP41KHR6 MRF6VP41KHSR6 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6VP41KHR6 MRF6VP41KHSR6 15 ...

Page 16

... MRF6VP41KHR6 MRF6VP41KHSR6 16 RF Device Data Freescale Semiconductor ...

Page 17

... MTTF” footnote added • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description source MRF6VP41KHR6 MRF6VP41KHSR6 copy to read “Test circuit copy to read “Test circuit load 17 ...

Page 18

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6VP41KHR6 MRF6VP41KHSR6 Document Number: MRF6VP41KH Rev. 5, 4/2010 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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