MRF6VP41KHR5 Freescale Semiconductor, MRF6VP41KHR5 Datasheet - Page 3
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MRF6VP41KHR5
Manufacturer Part Number
MRF6VP41KHR5
Description
MOSFET RF N-CH 1000W NI1230
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6VP41KHR7.pdf
(18 pages)
Specifications of MRF6VP41KHR5
Transistor Type
2 N-Channel (Dual)
Frequency
450MHz
Gain
20dB
Voltage - Rated
110V
Current Rating
5mA
Current - Test
150mA
Voltage - Test
50V
Power - Output
1000W
Package / Case
NI-1230
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
200W
Power Gain (typ)@vds
20.1dB
Frequency (min)
10MHz
Frequency (max)
500MHz
Package Type
NI-1230
Pin Count
5
Input Capacitance (typ)@vds
506@50VpF
Output Capacitance (typ)@vds
147@50VpF
Reverse Capacitance (typ)
3.3@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
67%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) V
Typical Performance — 500 MHz (In Freescale 500 MHz Test Fixture, 50 ohm system) V
(200 W Avg.), f = 500 MHz, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
Characteristic
(T
A
= 25°C unless otherwise noted) (continued)
Symbol
G
G
IRL
IRL
η
η
ps
ps
D
D
DD
= 50 Vdc, I
DD
Min
—
—
—
—
—
—
= 50 Vdc, I
MRF6VP41KHR6 MRF6VP41KHSR6
DQ
--10.2
20.1
19.5
Typ
--23
= 150 mA, P
DQ
67
66
= 150 mA, P
Max
out
—
—
—
—
—
—
= 1000 W Peak
out
= 1000 W CW
Unit
dB
dB
dB
dB
%
%
3