MRF6VP41KHR5 Freescale Semiconductor, MRF6VP41KHR5 Datasheet - Page 3

• Manufacturer Part Number: MRF6VP41KHR5
• Description: MOSFET RF N-CH 1000W NI1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP41KHR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 450MHz
• Gain: 20dB
• Voltage - Rated: 110V
• Current Rating: 5mA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: NI-1230
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 200W
• Power Gain (typ)@vds: 20.1dB
• Frequency (min): 10MHz
• Frequency (max): 500MHz
• Package Type: NI-1230
• Pin Count: 5
• Input Capacitance (typ)@vds: 506@50VpF
• Output Capacitance (typ)@vds: 147@50VpF
• Reverse Capacitance (typ): 3.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) V
Typical Performance — 500 MHz (In Freescale 500 MHz Test Fixture, 50 ohm system) V
(200 W Avg.), f = 500 MHz, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
Characteristic
(T
A
= 25°C unless otherwise noted) (continued)
Symbol
G
G
IRL
IRL
η
η
ps
ps
D
D
DD
= 50 Vdc, I
DD
Min
—
—
—
—
—
—
= 50 Vdc, I
MRF6VP41KHR6 MRF6VP41KHSR6
DQ
--10.2
20.1
19.5
Typ
--23
= 150 mA, P
DQ
67
66
= 150 mA, P
Max
out
—
—
—
—
—
—
= 1000 W Peak
out
= 1000 W CW
Unit
dB
dB
dB
dB
%
%
3