MRF6VP41KHR5 Freescale Semiconductor, MRF6VP41KHR5 Datasheet

MOSFET RF N-CH 1000W NI1230

MRF6VP41KHR5

Manufacturer Part Number
MRF6VP41KHR5
Description
MOSFET RF N-CH 1000W NI1230
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6VP41KHR5

Transistor Type
2 N-Channel (Dual)
Frequency
450MHz
Gain
20dB
Voltage - Rated
110V
Current Rating
5mA
Current - Test
150mA
Voltage - Test
50V
Power - Output
1000W
Package / Case
NI-1230
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
200W
Power Gain (typ)@vds
20.1dB
Frequency (min)
10MHz
Frequency (max)
500MHz
Package Type
NI-1230
Pin Count
5
Input Capacitance (typ)@vds
506@50VpF
Output Capacitance (typ)@vds
147@50VpF
Reverse Capacitance (typ)
3.3@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
67%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
500 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Designed primarily for pulsed wideband applications with frequencies up to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
P
Duty Cycle = 20%
Power
Operation
Derate above 25°C
out
Power Gain — 20 dB
Drain Efficiency — 64%
MTTF calculators by product.
= 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
C
= 25°C
(1,2)
Rating
DD
Operation
DD
= 50 Volts, I
DQ
= 150 mA,
Symbol
V
V
CW
T
T
DSS
T
GS
stg
RF
RF
C
J
CASE 375E- -04, STYLE 1
Document Number: MRF6VP41KH
CASE 375D- -05, STYLE 1
inA
inB
MRF6VP41KHR6 MRF6VP41KHSR6
MRF6VP41KHSR6
MRF6VP41KHSR6
/V
/V
MRF6VP41KHR6
MRF6VP41KHR6
10- -500 MHz, 1000 W, 50 V
GSA
GSB
Figure 1. Pin Connections
LATERAL N- -CHANNEL
NI- -1230S
PARTS ARE PUSH- -PULL
RF POWER MOSFETs
NI- -1230
3
4
-- 65 to +150
BROADBAND
--0.5, +110
--6, +10
Value
1107
(Top View)
150
225
4.6
Rev. 5, 4/2010
1
2 RF
RF
W/°C
outA
outB
Unit
Vdc
Vdc
°C
°C
°C
W
/V
/V
DSA
DSB
1

Related parts for MRF6VP41KHR5

MRF6VP41KHR5 Summary of contents

Page 1

... C Derate above 25°C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008--2010. All rights reserved. RF Device Data Freescale Semiconductor = 50 Volts 150 mA, DD ...

Page 2

... Vdc — — 100 μAdc — — 1.68 3 Vdc 1.5 2.2 3.5 Vdc — 0.28 — Vdc — 3.3 — pF — 147 — pF — 506 — 1000 W Peak (200 W Avg.), f = 450 MHz, out — % — --18 --9 dB (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Typical Performance — 500 MHz (In Freescale 500 MHz Test Fixture, 50 ohm system) V (200 W Avg.), f = 500 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) A Symbol G ps η ...

Page 4

... C21 COAX4 C20 V SUPPLY + + C32 C33 C34 C35 C36 = 2.55 r Part Number Manufacturer Fair--Rite Illinois Kemet Kemet Kemet ATC Johanson Components ATC ATC ATC ATC ATC ATC ATC ATC Nippon Chemi--Con Micro--Coax Coilcraft Coilcraft RF Device Data Freescale Semiconductor RF ...

Page 5

... COAX1 C5 C6 COAX2 L2 B2 C12 C11 Figure 3. MRF6VP41KHR6(HSR6) Test Circuit Component Layout — 450 MHz RF Device Data Freescale Semiconductor C27 MRF6VP41KH Rev C25 L1 C7 C10 C8 C9 C15 C32 C14 C13 C29 C30 C28 C26 COAX3 L3 C22 C23 C18 C19 C16 C17 ...

Page 6

... INPUT POWER (dBm) PULSED in Input Power 150 mA 450 MHz DQ Pulse Width = 100 μsec Duty Cycle = 20% 200 400 600 800 1000 1200 P , OUTPUT POWER (WATTS) PULSED out Figure 9. Pulsed Power Gain versus Output Power RF Device Data Freescale Semiconductor = 175°C 100 Actual 43 44 1400 ...

Page 7

... W Peak, Pulse Width = 100 μsec, DD out Duty Cycle = 20%, and η = 64%. D MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature — Pulsed RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Vdc --30_C I = 150 mA ...

Page 8

... Z = Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured from load drain to drain, balanced configuration. Device Under + -- Test -- + Z Z source load f = 450 MHz load Ω Output Matching Network RF Device Data Freescale Semiconductor ...

Page 9

... Chip Capacitors C20, C21, C22, C23 470 μ Electrolytic Capacitors L1, L2 2.5 nH Inductors L3 Turn #16 AWG ID=0.160″ Inductors, Hand Wound PCB Arlon CuClad 250GX--0300--55--22, 0.030″, ε RF Device Data Freescale Semiconductor MRF6VP41KH 352 MHz Rev Description 2743019447 UT141--25 ATC100B270JT500XT ...

Page 10

... MHz Ω 352.2 0.5 + j6.5 2.9 + j6. Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured from load drain to drain, balanced configuration. Device Under + -- Test -- + Z Z source load load Ω Output Matching Network RF Device Data Freescale Semiconductor ...

Page 11

... C26, C31 2.2 μF, 100 V Chip Capacitors C29, C30, C35, C36 330 μ Electrolytic Capacitors L1, L2 2.5 nH, 1 Turn Inductors L3 nH, 10 Turn Inductors C17 not used in MRF6VP41KHR6(HSR6) 500 MHz application. RF Device Data Freescale Semiconductor C27 MRF6VP41KH Rev C25 L1 C7 C10 C8 C9 ...

Page 12

... Z = Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured from load drain to drain, balanced configuration. Device Under + -- Test -- + Z Z source load f = 500 MHz load Ω Output Matching Network RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6VP41KHR6 MRF6VP41KHSR6 13 ...

Page 14

... MRF6VP41KHR6 MRF6VP41KHSR6 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6VP41KHR6 MRF6VP41KHSR6 15 ...

Page 16

... MRF6VP41KHR6 MRF6VP41KHSR6 16 RF Device Data Freescale Semiconductor ...

Page 17

... Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description source MRF6VP41KHR6 MRF6VP41KHSR6 copy to read “ ...

Page 18

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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