BF 5030W E6327 Infineon Technologies, BF 5030W E6327 Datasheet - Page 2

• Manufacturer Part Number: BF 5030W E6327
• Description: MOSFET N-CH 8V 25MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BF 5030W E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 10mA
• Voltage - Test: 3V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BF5030WE6327XT; SP000101236

Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T
T
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
BF5030W
BF5030, BF5030R
1
For calculation of R thJA please refer to Application Note Thermal Resistance
S
S
≤ 94 °C, BF5030W
≤ 76 °C, BF5030, BF5030R
1)
2
Symbol
V
I
I
V
P
T
T
Symbol
R
D
G1S
stg
ch
DS
G1S
tot
thchs
, I
, V
G2S
G2S
-55 ... 150
Value
Value
≤ 280
≤ 370
200
200
150
± 1
± 6
25
8
BF5030...
2009-05-05
Unit
V
mA
mA
V
mW
°C
Unit
K/W