BF 5030W E6327 Infineon Technologies, BF 5030W E6327 Datasheet - Page 5

• Manufacturer Part Number: BF 5030W E6327
• Description: MOSFET N-CH 8V 25MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BF 5030W E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 10mA
• Voltage - Test: 3V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BF5030WE6327XT; SP000101236

Total power dissipation P
BF5030W
Drain current I
 V
… V
mA
mA
220
180
160
140
120
100
DS
DS
80
60
40
20
35
25
20
15
10
0
5
0
0
0
= 5 V, V
= 3 V, V
15
30
10
D
G2S
G2S
45
= ƒ(I
= 4 V
= 3 V
60
20
G1
75
)
90 105 120 °C
30
tot
= ƒ(T
µA
S
)
T
I
G1
S
150
50
5
Total power dissipation P
BF5030, BF5030R
Output characteristics I
V
 V
G1S
mW
mA
220
180
160
140
120
100
DS
80
60
40
20
22
18
16
14
12
10
= Parameter
0
8
6
4
2
0
0
0
= 3 V, … V
15
2
30
45
4
1V
DS
60
1.4V
1V
= 5 V
1.3V
75
6
1.2V
D
1.2V
90 105 120 °C
= ƒ(V
tot
1.3V
1.4V
8
= ƒ(T
BF5030...
2009-05-05
DS
V
S
)
)
T
V
S
DS
150
12