BF 998R E6327 Infineon Technologies, BF 998R E6327 Datasheet - Page 4

• Manufacturer Part Number: BF 998R E6327
• Description: MOSFET N-CH RF 12V 30MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF 998R E6327

• Package / Case: SOT-143R
• Transistor Type: N-Channel
• Frequency: 45MHz
• Gain: 28dB
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 2.8dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Drain Source Voltage (max): 12V
• Power Gain (typ)@vds: 28@8VdB
• Noise Figure (max): 2.8(Typ)dB
• Frequency (max): 1GHz
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.024S
• Input Capacitance (typ)@vds: 2.1@8V@Gate 1/1.2@8V@Gate 2pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF998RE6327XT; SP000010979

Total power dissipation P
BF998, BF998R
Gate 1 forward transconductance
g
V
fs
DS
mW
=
mS
220
180
160
140
120
100
= 5V, V
80
60
40
20
26
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0
(I
D
15
)
0V
G2S
4
30
= Parameter
45
8
1V
60
12
75
90 105 120 °C
tot
16
2V
= (T
4V
mA
S
)
T
I
D
S
150
24
4
Output characteristics I
V
V
Gate 1 forward transconductance
g
fs1
G2S
G1S
mA
mS
=
26
22
20
18
16
14
12
10
26
22
20
18
16
14
12
10
= 4 V
= Parameter
8
6
4
2
0
8
6
4
2
0
-1
0
(V
G1S
-0.75
2
)
-0.5
4
-0.25
6
D
8
0
=
0.2V
0.4V
-0.4V
-0.2V
0V
0.25
10
(V
2007-04-20
DS
BF998...
4V
)
V
V
2V
1V
0V
V
V
DS
G1S
0.75
14