BF 998R E6327 Infineon Technologies, BF 998R E6327 Datasheet - Page 5

• Manufacturer Part Number: BF 998R E6327
• Description: MOSFET N-CH RF 12V 30MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF 998R E6327

• Package / Case: SOT-143R
• Transistor Type: N-Channel
• Frequency: 45MHz
• Gain: 28dB
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 2.8dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Drain Source Voltage (max): 12V
• Power Gain (typ)@vds: 28@8VdB
• Noise Figure (max): 2.8(Typ)dB
• Frequency (max): 1GHz
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.024S
• Input Capacitance (typ)@vds: 2.1@8V@Gate 1/1.2@8V@Gate 2pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF998RE6327XT; SP000010979

Drain current I
V
V
Noise figure F =
f = 45 MHz
DS
G2S
mA
dB
= 5V
30
20
15
10
10
= Parameter
5
0
8
7
6
5
4
3
2
1
0
-1
0
-0.75 -0.5 -0.25
D
1
=
(V
(V
G2S
G1S
0
2
)
)
0.25
0V
4V
0.5
V
V
1V
V
V
G1S
G2S
2V
1
4
5
Power gain G
f = 45 MHz
Noise figure F =
f = 800 MHz
dB
dB
30
20
15
10
5
0
5
3
2
1
0
0
0
ps
1
1
=
(V
(V
G2S
G2S
2
2
)
)
2007-04-20
V
V
BF998...
V
V
G2S
G2S
4
4