BF 998R E6327 Infineon Technologies, BF 998R E6327 Datasheet - Page 5
![MOSFET N-CH RF 12V 30MA SOT-143](/photos/5/22/52282/448-sot-143_sml.jpg)
BF 998R E6327
Manufacturer Part Number
BF 998R E6327
Description
MOSFET N-CH RF 12V 30MA SOT-143
Manufacturer
Infineon Technologies
Datasheet
1.BF998E6327.pdf
(9 pages)
Specifications of BF 998R E6327
Package / Case
SOT-143R
Transistor Type
N-Channel
Frequency
45MHz
Gain
28dB
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
2.8dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.03 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Channel Type
N
Drain Source Voltage (max)
12V
Power Gain (typ)@vds
28@8VdB
Noise Figure (max)
2.8(Typ)dB
Frequency (max)
1GHz
Package Type
SOT-143R
Pin Count
3 +Tab
Forward Transconductance (typ)
0.024S
Input Capacitance (typ)@vds
2.1@8V@Gate 1/1.2@8V@Gate 2pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BF998RE6327XT
SP000010979
SP000010979
Drain current I
V
V
Noise figure F =
f = 45 MHz
DS
G2S
mA
dB
= 5V
30
20
15
10
10
= Parameter
5
0
8
7
6
5
4
3
2
1
0
-1
0
-0.75 -0.5 -0.25
D
1
=
(V
(V
G2S
G1S
0
2
)
)
0.25
0V
4V
0.5
V
V
1V
V
V
G1S
G2S
2V
1
4
5
Power gain G
f = 45 MHz
Noise figure F =
f = 800 MHz
dB
dB
30
20
15
10
5
0
5
3
2
1
0
0
0
ps
1
1
=
(V
(V
G2S
G2S
2
2
)
)
2007-04-20
V
V
BF998...
V
V
G2S
G2S
4
4