BG 3123 E6327 Infineon Technologies, BG 3123 E6327 Datasheet - Page 2

• Manufacturer Part Number: BG 3123 E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3123 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA, 20mA
• Noise Figure: 1.8dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5V@Amp A/30@5V@Amp BdB
• Noise Figure (max): 1.8(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: SP000014846

Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1
For calculation of R thJA please refer to Application Note Thermal Resistance
1)
2
Symbol
V
I
P
T
T
Symbol
R
D
I
V
stg
ch
DS
tot
thchs
G1/2SM
G1/G2S
-55 ... 150
Value
Value
200
150
25
20
150
8
1
6
BG3123...
2007-04-26
Unit
V
mA
V
mW
°C
Unit
K/W