BG 3123 E6327 Infineon Technologies, BG 3123 E6327 Datasheet - Page 2
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BG 3123 E6327
Manufacturer Part Number
BG 3123 E6327
Description
MOSFET N-CH DUAL 8V 25MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BG_3123_E6327.pdf
(12 pages)
Specifications of BG 3123 E6327
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
25dB
Voltage - Rated
8V
Current Rating
25mA, 20mA
Noise Figure
1.8dB
Current - Test
14mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
SP000014846
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1
For calculation of R thJA please refer to Application Note Thermal Resistance
1)
2
Symbol
V
I
P
T
T
Symbol
R
D
I
V
stg
ch
DS
tot
thchs
G1/2SM
G1/G2S
-55 ... 150
Value
Value
200
150
25
20
150
8
1
6
BG3123...
2007-04-26
Unit
V
mA
V
mW
°C
Unit
K/W