BG 3123 E6327 Infineon Technologies, BG 3123 E6327 Datasheet - Page 5
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BG 3123 E6327
Manufacturer Part Number
BG 3123 E6327
Description
MOSFET N-CH DUAL 8V 25MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BG_3123_E6327.pdf
(12 pages)
Specifications of BG 3123 E6327
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
25dB
Voltage - Rated
8V
Current Rating
25mA, 20mA
Noise Figure
1.8dB
Current - Test
14mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
SP000014846
Total power dissipation P
amp. A
Drain current I
V
amp. A
G2S
mW
mA
300
200
150
100
50
16
12
10
= 4V
0
8
6
4
2
0
0
0
20
10
D
40
20
= (I
60
30
G1
)
80
40
tot
100
= (T
50
120 °C
µA
S
)
T
I
G1
S
150
70
5
Total power dissipation P
amp. B
Drain current I
V
amp. B
G2S
mW
mA
300
200
150
100
50
16
12
10
= 4V
0
8
6
4
2
0
0
0
20
10
D
40
20
= (I
60
30
G1
)
80
40
tot
100
= (T
50
BG3123...
2007-04-26
120 °C
S
µA
)
T
I
G1
S
150
70