BG 3430R E6327 Infineon Technologies, BG 3430R E6327 Datasheet

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BG 3430R E6327

Manufacturer Part Number
BG 3430R E6327
Description
MOSFET N-CH DUAL 8V 25MA SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG 3430R E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
25dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.3dB
Current - Test
14mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000240529
DUAL N-Channel MOSFET Tetrode
• Designed for input stages of
• Two AGC amplifiers in one single package
• Only one switching line to control both FETs
• Integrated gate protection diodes
• High gain, low noise figure, high AGC-range
• Good cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Detailed functional diagram on page 4
BG3430R
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BG3430R
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
2 band tuners
with on-chip internal switch
Package
SOT363
1=G1* 2=S
1
Pin Configuration
3=D*
4=D**
5=G2
6
5
4
6=G1** KNs
BG3430R
2009-10-01
1
Marking
2
3

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BG 3430R E6327 Summary of contents

Page 1

DUAL N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners • Two AGC amplifiers in one single package with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes • ...

Page 2

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter 1) Channel - soldering point 1 For calculation of R thJA please ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage I = 100 µ G1S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage +I = ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Forward transconductance Gate1 input capacitance MHz Output capacitance MHz Power gain f = 800 MHz MHz Noise figure f ...

Page 5

Functional diagram a) shows pinning of BG3430R (AGC) (RFin ) B Amp Int. switch Amp (RFin ) (Ground) A Rg1 (RFout ) B Amp. ...

Page 6

Total power dissipation P amp amp. B 300 mW 200 150 100 Output characteristics I D amp amp ...

Page 7

Gate 1 forward transconductance = ƒ( 5V G2S amp amp ƒ(V Drain ...

Page 8

Crossmodulation V = (AGC) unw amp amp 120 dBµV 100 AGC 8 BG3430R 2009-10-01 ...

Page 9

Crossmodulation test circuit R GEN 50Ω R GEN 50Ω AGC DS 4n7 R1 10k Ω 2.2 uH 4n7 4n7 50 Ω RG1 AGC DS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 50 Ω 9 ...

Page 10

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 11

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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