BG 3430R E6327 Infineon Technologies, BG 3430R E6327 Datasheet - Page 6

• Manufacturer Part Number: BG 3430R E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3430R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000240529

Total power dissipation P
amp. A = amp. B
Output characteristics I
amp. A = amp. B
mW
mA
300
200
150
100
50
28
24
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0
20
2
40
4
60
6
80
D
= ƒ(V
tot
8
100
= ƒ(T
10
DS
120 °C
1.5V
1.2V
1.1V
1.0V
1.3V
S
1.4V
)
)
T
V
V
S
d
150
13
6
Drain current I
V
amp. A
Gate 1 current I
V
amp. A
G2S
DS
mA
240
µA
200
180
160
140
120
100
= 5V, V
32
24
20
16
12
80
60
40
20
= 4V
8
4
0
0
0
0
10
0.4
G2S
20
0.8
D
G1
= Parameter
30
= ƒ(I
1.2
= ƒ(V
40
G1
1.6
50
)
G1S
60
2
)
70
BG3430R
2.4
2009-10-01
80 µA
V
I
V
G1
g1
2.5V
4V
3.5V
3V
2V
3.2
100