MRF6S21140HR5 Freescale Semiconductor, MRF6S21140HR5 Datasheet - Page 13

• Manufacturer Part Number: MRF6S21140HR5
• Description: MOSFET RF N-CHAN 28V 30W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21140HR5

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
4
5
Feb. 2010
May 2007
Date
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
• Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Corrected V
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
• Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device’s
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps
• Added Product Documentation and Revision History, p. 10
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
• Added On Characteristic V
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 13
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
is standard, p. 1
as functionality is standard, p. 1
provided in Thermal Characteristics table), p. 1
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Functional Test”, On Characteristics table, p. 2
information, p. 2
numbers, p. 3
capabilities, p. 5
limitations, p. 6
operating characteristics and location of MTTF calculator for device, p. 7
number, PCN13232, p. 1, 2
DS
to V
DD
in the RF test condition voltage callout for V
REVISION HISTORY
DS(on)
Min value, p. 2
Description
MRF6S21140HR3 MRF6S21140HSR3
GS(Q)
and added “Measured in
2
and listed
13