MRF6S21140HR5 Freescale Semiconductor, MRF6S21140HR5 Datasheet - Page 6

• Manufacturer Part Number: MRF6S21140HR5
• Description: MOSFET RF N-CHAN 28V 30W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21140HR5

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF6S21140HR3 MRF6S21140HSR3
35
30
25
20
15
10
5
--10
--20
--30
--40
--50
--60
0
1
0.1
V
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz Carrier
Spacing. 3.84 MHz Channel
Bandwidth. PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 7. Intermodulation Distortion Products
DD
Figure 9. 2- -Carrier W- -CDMA ACPR, IM3,
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
T
DD
C
5th Order
= 28 Vdc, I
3rd Order
7th Order
= -- 30_C
25_C
= 28 Vdc, P
Power Gain and Drain Efficiency
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
versus Output Power
85_C
G
= 1200 mA
out
versus Tone Spacing
TWO--TONE SPACING (MHz)
ps
= 140 W (PEP), I
1
10
16
15
14
13
12
10
11
9
η
85_C
DQ
--30_C
D
0
= 1200 mA
Figure 11. Power Gain versus Output Power
25_C
25_C
10
85_C
TYPICAL CHARACTERISTICS
50
ACPR
25_C
P
--30_C
85_C
out
--30_C
, OUTPUT POWER (WATTS) CW
IM3
100
100
V
DD
100
--25
--30
--35
--40
--45
--50
--55
--60
= 24 V
18
17
16
15
14
13
12
28 V
150
1
V
I
f = 2140 MHz
DQ
58
57
56
55
54
53
52
51
50
49
48
DD
Figure 10. Power Gain and Drain Efficiency
32
= 1200 mA
I
f = 2140 MHz
= 28 Vdc
DQ
32 V
= 1200 mA
Figure 8. Pulsed CW Output Power versus
200
P1dB = 52 dBm (158.5 W)
P
versus CW Output Power
34
out
, OUTPUT POWER (WATTS) CW
η
T
D
85_C
25_C
C
10
= --30_C
250
P3dB = 52.6 dBm (180 W)
P
36
in
, INPUT POWER (dBm)
Input Power
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
DD
--30_C
38
= 28 Vdc, I
Freescale Semiconductor
100
DQ
40
G
= 1200 mA
85_C
ps
RF Device Data
Ideal
25_C
Actual
42
1000
60
50
40
30
20
10
0
44