MRF6S9045NR1 Freescale Semiconductor, MRF6S9045NR1 Datasheet - Page 17

• Manufacturer Part Number: MRF6S9045NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.7dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
4
Aug. 2008
Date
• Listed replacement part and Device Migration notification reference number, p. 1
• Listed MRF6S9045NBR1 as no longer manufactured, p. 1
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in
• Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
• Corrected V
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
• Corrected C
• Updated Part Numbers in Table 6 Component Designations and Values, to latest RoHS compliant part
• Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps
• Added Product Documentation and Revision History, p. 17
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC
Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3.
provided in Thermal Characteristics table), p. 1
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Functional Test”, On Characteristics table, p. 2
information, p. 2
Dynamic Characteristics table, p. 2
numbers, p. 4
capabilities, p. 6
limitations, p. 8
operating characteristics and location of MTTF calculator for device, p. 8
DS
iss
test condition to indicate AC stimulus on the V
to V
PRODUCT DOCUMENTATION
DD
in the RF test condition voltage callout for V
REVISION HISTORY
Description
GS
connection versus the V
GS(Q)
MRF6S9045NR1 MRF6S9045NBR1
and added “Measured in
DS
2
connection,
and listed
17