MRF6S9045NR1 Freescale Semiconductor, MRF6S9045NR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S9045NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.7dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF6S9045NR1 MRF6S9045NBR1
24
23
22
21
20
19
475 mA
275 mA
350 mA
175 mA
I
DQ
Figure 5. Two - Tone Power Gain versus
= 520 mA
1
P
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
out
V
Two−Tone Measurements
DD
, OUTPUT POWER (WATTS) PEP
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Output Power
22.8
22.6
22.4
22.2
21.8
21.6
21.4
21.2
22.6
22.4
22.2
21.8
21.6
21.4
21.2
20.8
23
22
21
22
21
850
850
10
ALT1
V
I
Sync, Paging, Traffic Codes 8 Through 13
DQ
DD
V
I
Sync, Paging, Traffic Codes 8 Through 13
DQ
860
860
DD
= 350 mA, N−CDMA IS−95 Pilot
= 28 Vdc, P
TYPICAL CHARACTERISTICS
= 350 mA, N−CDMA IS−95 Pilot
= 28 Vdc, P
ALT1
IRL
IRL
870
870
out
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
out
= 20 W (Avg.)
ACPR
G
ACPR
G
= 10 W (Avg.)
100
ps
ps
880
880
−10
−20
−30
−40
−50
−60
−70
890
890
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements
I
DD
DQ
900
900
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
= 175 mA
1
η
D
η
P
D
out
out
out
910
910
versus Output Power
, OUTPUT POWER (WATTS) PEP
35
34
33
32
31
−45
−50
−55
−60
−65
−70
= 10 Watts Avg.
48
47
46
45
−35
−40
−45
−50
−55
−60
= 20 Watts Avg.
275 mA
475 mA
−5
−10
−15
−20
−25
−5
−10
−15
−20
−25
−30
−30
Freescale Semiconductor
10
RF Device Data
520 mA
350 mA
100