MRF6S9125MR1 Freescale Semiconductor, MRF6S9125MR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S9125MR1
• Description: MOSFET RF N-CH 28V 27W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9125MR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 20.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 27W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

6
MRF6S9125MR1 MRF6S9125MBR1
22
21
20
19
18
17
16
1
1187 mA
950 mA
Figure 5. Two - Tone Power Gain versus
712 mA
V
Two−Tone Measurements, 100 MHz Tone Spacing
I
DQ
DD
= 1475 mA
P
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
out
475 mA
, OUTPUT POWER (WATTS) PEP
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
Output Power
10
20.5
20.3
19.8
19.5
19.3
18.8
18.5
19.6
19.4
19.2
18.8
18.6
18.4
18.2
20
19
19
18
850
850
η
η
D
D
860
860
V
I
Sync, Paging, Traffic Codes 8 Through 13
DQ
TYPICAL CHARACTERISTICS
DD
100
= 950 mA, N−CDMA IS−95 Pilot
= 28 Vdc, P
V
I
Sync, Paging, Traffic Codes 8 Through 13
DQ
DD
870
870
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
= 950 mA, N−CDMA IS−95 Pilot
= 28 Vdc, P
G
ps
out
300
= 62.5 W (Avg.)
880
880
out
= 27 W (Avg.)
IRL
890
890
−10
−20
−30
−40
−50
−60
1
Figure 6. Third Order Intermodulation Distortion
V
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 MHz Tone Spacing
900
900
DD
= 28 Vdc
ACPR
ACPR
ALT1
G
ALT1
ps
475 mA
IRL
P
910
910
out
34
32
30
28
52
48
44
40
−30
−40
−50
−60
−30
−40
−50
−60
−70
−70
, OUTPUT POWER (WATTS) PEP
versus Output Power
out
out
= 62.5 Watts Avg.
= 27 Watts Avg.
10
I
DQ
1187 mA
−5
−10
−15
−20
−5
−10
−15
−20
−25
−25
= 1425 mA
Freescale Semiconductor
712 mA
950 mA
RF Device Data
100
300