MRF6S9125MR1 Freescale Semiconductor, MRF6S9125MR1 Datasheet - Page 7

• Manufacturer Part Number: MRF6S9125MR1
• Description: MOSFET RF N-CH 28V 27W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9125MR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 20.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 27W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
1
Figure 7. Intermodulation Distortion Products
V
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, Center Frequency = 880 MHz
DD
= 28 Vdc, I
5th Order
3rd Order
7th Order
P
out
DQ
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 950 mA
10
50
40
30
20
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
0
0.1
56
55
54
53
52
51
50
49
48
V
f = 880 MHz, N−CDMA IS−95 (Pilot
Sync, Paging, Traffic Codes 8
Through 13)
28
Gain and Drain Efficiency versus Output Power
DD
= 28 Vdc, I
P1dB = 51.5 dBm (139.3 W)
25_C
Figure 9. Pulse CW Output Power versus
29
TYPICAL CHARACTERISTICS
100
DQ
P
out
30
= 950 mA
1
, OUTPUT POWER (WATTS) AVG.
P
P3dB = 52.4 dBm (172.5 W)
in
25_C
, INPUT POWER (dBm)
300
31
Input Power
G
ps
V
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
DD
32
= 28 Vdc, I
85_C
10
−10
−20
−30
−40
−50
−60
T
C
33
= −30_C
0.1
η
Figure 8. Intermodulation Distortion Products
DQ
D
−30_C
V
I
Center Frequency = 880 MHz
7th Order
5th Order
DQ
3rd Order
DD
= 950 mA
−30_C
= 950 mA, Two−Tone Measurements
34
= 28 Vdc, P
85_C
100 200
ACPR
ALT1
35
25_C
25_C
85_C
Actual
Ideal
versus Tone Spacing
out
TWO−TONE SPACING (MHz)
= 125 W (PEP)
1
−30
−40
−50
−60
−70
−80
MRF6S9125MR1 MRF6S9125MBR1
36
10
100
7