BG 5130R E6327 Infineon Technologies, BG 5130R E6327 Datasheet
BG 5130R E6327
Specifications of BG 5130R E6327
SP000101237
Related parts for BG 5130R E6327
BG 5130R E6327 Summary of contents
Page 1
DUAL - N-Channel MOSFET Tetrode Low noise gain controlled input stages of UHF-and VHF - tuners with supply voltage Integrated gate protection diodes Low noise figure High gain, high forward transadmittance Improved cross modulation at gain ...
Page 2
Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA ...
Page 3
Electrical Characteristics at T Parameter AC Characteristics - (verified by random sampling) Forward transconductance G2S Gate1 input capacitance MHz DS ...
Page 4
Total power dissipation P 300 mW 200 150 100 Output characteristics Drain ...
Page 5
Gate 1 forward transconductance 3V Parameter DS G2S 1. Drain current I = ...
Page 6
Power gain G2S MHz -10 - Noise figure G2S f = 800 MHz ...
Page 7
Crossmodulation V = (AGC) unw 115 dBµV 105 100 AGC 7 BG5130R 2006-04-13 ...
Page 8
Crossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BG5130R 4n7 RL 50 Semibiased 2006-04-13 ...
Page 9
Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
Page 10
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...