BG 5130R E6327 Infineon Technologies, BG 5130R E6327 Datasheet - Page 2

• Manufacturer Part Number: BG 5130R E6327
• Description: MOSFET N-CH DUAL 8V SOT-363R
• Manufacturer: Infineon Technologies

Specifications of BG 5130R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 10mA
• Voltage - Test: 3V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 35@3VdB
• Noise Figure (max): 1.3(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.041S
• Input Capacitance (typ)@vds: 2.7@3V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BG5130RE6327XT; SP000101237

1 For calculation of R
Thermal Resistance
Parameter
Channel - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
D
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 1 µA, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 6 V, V
= 6 V, V
= 10 mA, V
= 10 mA, V
G1S
G1S
G2S
G2S
G1S
G2S
G1S
= 0 , V
thJA
= 0 , V
= 3 V, R
= 3 V, I
= 3 V, I
G2S
G1S
= 0
= 0 , V
please refer to Application Note Thermal Resistance
= 0 , V
= 0 , V
G2S
G2S
D
D
DS
1)
G1
= 20 µA
= 20 µA
= 0
= 0
= 3 V
DS
DS
= 100 k
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+V
+V
+I
+I
I
I
V
V
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
12
6
6
-
-
-
-
-
-
Values
Value
typ.
0.6
0.7
10
280
-
-
-
-
-
-
max.
100
15
15
50
50
BG5130R
2006-04-13
-
-
-
-
Unit
V
nA
mA
V
Unit
K/W