BFS17W,115 NXP Semiconductors, BFS17W,115 Datasheet - Page 2

• Manufacturer Part Number: BFS17W,115
• Description: TRANS NPN 15V 1GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS17W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.6GHz
• Noise Figure (db Typ @ F): 4.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 2mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 1600 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 25
• Frequency (max): 1.6GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1990-2; 934022860115; BFS17W T/R

NXP Semiconductors
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1995 Sep 04
V
V
I
P
h
f
C
C
T
V
V
V
I
P
T
T
C
T
C
SYMBOL
SYMBOL
FE
j
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 1 GHz wideband transistor
c
re
s
s
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
collector capacitance
feedback capacitance
junction temperature
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
up to T
I
I
I
I
open emitter
open base
open collector
T
PIN
C
C
E
C
s
1
2
3
= 0; V
= 2 mA; V
= 25 mA; V
= 1 mA; V
= 118 C; note 1
s
base
emitter
collector
CB
= 118 C; note 1
= 10 V; f = 1 MHz
CONDITIONS
CE
CE
DESCRIPTION
CE
2
= 1 V
= 5 V; f = 1 MHz
CONDITIONS
= 5 V
handbook, 2 columns




25




Marking code: E1
MIN.
Top view




90
1.6
0.8
0.75






65

Fig.1 SOT323
TYP.
MIN.
Product specification
1
25
15
50
300


1.5

175
25
15
2.5
50
300
+150
175
3
MAX.
MAX.
BFS17W
MBC870
2
V
V
mA
mW
GHz
pF
pF
C
V
V
V
mA
mW
C
C
UNIT
UNIT