BFS17W,115 NXP Semiconductors, BFS17W,115 Datasheet - Page 3
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BFS17W,115
Manufacturer Part Number
BFS17W,115
Description
TRANS NPN 15V 1GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFS17W115.pdf
(8 pages)
Specifications of BFS17W,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.6GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
25 @ 2mA @ 1V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
1600 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
25V
Emitter-base Voltage
2.5V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
25
Frequency (max)
1.6GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1990-2
934022860115
BFS17W T/R
934022860115
BFS17W T/R
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1995 Sep 04
R
I
h
f
C
C
C
F
handbook, halfpage
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C (unless otherwise specified).
NPN 1 GHz wideband transistor
th j-s
c
e
re
(mW)
P tot
s
400
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
Fig.2 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MLB587
( C)
o
I
I
I
f = 500 MHz
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 MHz; T
I
f = 500 MHz;
E
C
C
E
C
B
C
200
= 0; V
= 2 mA; V
= 25 mA; V
= i
= i
= i
= 2 mA; V
e
b
c
= 0; V
= 0; V
= 0; V
CONDITIONS
CB
= 10 V
3
CB
EB
CE
amb
CE
CE
CE
handbook, halfpage
S
= 0.5 V;
= 1 V
= 10 V;
= 5 V;
= 5 V;
= 25 C
= 5 V;
=
V
CE
up to T
h FE
Fig.3
opt
= 1 V.
60
40
20
0
10
−1
s
DC current gain as a function of collector
current; typical values.
= 118 C; note 1
CONDITIONS
25
MIN.
1
90
1.6
0.8
2
0.75
4.5
TYP.
10
Product specification
10
1.5
VALUE
I C (mA)
MAX.
190
BFS17W
MBG237
10
nA
GHz
pF
pF
pF
dB
2
UNIT
UNIT
K/W