BFR92A,215 NXP Semiconductors, BFR92A,215 Datasheet - Page 2
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BFR92A,215
Manufacturer Part Number
BFR92A,215
Description
TRANS NPN 25MA 15V 5GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR92A215.pdf
(12 pages)
Specifications of BFR92A,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2.1dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 15mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
2V
Collector Current (dc) (max)
25mA
Dc Current Gain (min)
40
Frequency (max)
5GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1650-2
933551560215
BFR92A T/R
933551560215
BFR92A T/R
NXP Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
V
V
I
P
C
f
G
F
V
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
stg
j
High power gain
Low noise figure
Low intermodulation distortion.
RF wideband amplifiers and
oscillators.
CBO
CEO
tot
O
CBO
CEO
EBO
tot
re
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
1
2
3
Rev. 04 - 2 March 2009
base
emitter
collector
T
I
I
I
T
I
T
I
d
R
open emitter
open base
open collector
T
C
C
C
C
C
im
s
amb
amb
s
s
L
= i
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
=
= 75 ; f
= 60 dB; I
95 C
95 C; note 1; see Fig.3
c
= 25 C
= 25 C
DESCRIPTION
opt
= 0; V
; T
amb
p
CE
CE
CONDITIONS
CONDITIONS
+ f
CE
CE
CE
C
= 25 C
= 10 V; f = 1 MHz
= 10 V; f = 1 GHz;
q
= 14 mA; V
= 10 V; f = 500 MHz
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
f
r
= 793.25 MHz
CE
= 10 V;
page
Marking code: P2%.
0.35
5
14
8
2.1
150
Top view
1
65
MIN.
TYP.
Fig.1 SOT23.
Product specification
20
15
25
300
20
15
2
25
300
+150
175
MAX.
MAX.
3
MSB003
BFR92A
2
2 of 12
V
V
mA
mW
pF
GHz
dB
dB
dB
mV
V
V
V
mA
mW
C
C
UNIT
UNIT