BFR92A,215 NXP Semiconductors, BFR92A,215 Datasheet - Page 3

• Manufacturer Part Number: BFR92A,215
• Description: TRANS NPN 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR92A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 40
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1650-2; 933551560215; BFR92A T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. Measured on the same die in a SOT37 package (BFR90A).
3. d
4. I
R
I
h
C
C
C
f
G
F
V
d
SYMBOL
SYMBOL
j
CBO
T
FE
2
O
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 5 GHz wideband transistor
UM
V
V
V
measured at f
V
V
measured at f
C
im
s
p
q
r
p
q
UM
= 14 mA; V
= V
is the temperature at the soldering point of the collector pin.
= V
= V
= 60 mV at f
= 60 mV at f
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
O
O
O
at d
thermal resistance from junction to soldering point T
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain (note 1)
noise figure
output voltage
second order intermodulation
distortion
6 dB; f
6 dB; f
im
CE
p
p
= 60 dB; f
+ f
p
q
+ f
r
q
= 10 V; R
= 250 MHz;
= 560 MHz;
= 805.25 MHz;
PARAMETER
= 803.25 MHz;
q
q
= 810 MHz.
f
r
= 793.25 MHz.
p
L
PARAMETER
= 795.25 MHz;
= 75 ; VSWR
C
= 14 mA; V
I
I
I
see Fig.5
I
I
I
see Fig.6
I
T
I
T
I
see Figs 13 and 14
I
see Figs 13 and 14
notes 2 and 3
notes 2 and 4; see Fig.16
CE
E
C
E
C
C
C
C
C
C
C
amb
amb
s
s
= 0; V
= 15 mA; V
= i
= i
= i
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
= 5 mA; V
=
=
= 10 V; R
2; T
Rev. 04 - 2 March 2009
e
c
c
= 25 C
= 25 C
opt
opt
= 0; V
= 0; V
= 0; V
amb
CB
; T
; T
= 25 C
amb
amb
= 10 V
CONDITIONS
CB
EB
CE
CE
CE
L
12
CE
CE
CE
CE
= 75 ; VSWR
= 25 C;
= 25 C;
= 10 V; f = 1 MHz;
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
is zero and
= 10 V; f = 500 MHz;
= 10 V; see Fig.4
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
s
CONDITIONS
95 C; note 1
G
UM
2; T
=
amb
10 log
= 25 C
65
MIN.
------------------------------------------------------------- - dB ˙
VALUE
1
260
–
S
90
0.6
1.2
0.35
5
14
8
2.1
3
150
TYP.
50
11
Product specification
S
2
21
1
2
50
135
MAX.
BFR92A
–
S
22
3 of 12
UNIT
K/W
2
nA
pF
pF
pF
GHz
dB
dB
dB
dB
mV
dB
UNIT
.