PBR941,215 NXP Semiconductors, PBR941,215 Datasheet - Page 4
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PBR941,215
Manufacturer Part Number
PBR941,215
Description
TRANSISTOR NPN UHF 50MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PBR941215.pdf
(16 pages)
Specifications of PBR941,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 1GHz ~ 2GHz
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.05 A
Power Dissipation
360 mW
Maximum Operating Frequency
8000 MHz (Typ)
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1174-2
934043060215
PBR941 T/R
934043060215
PBR941 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBR941,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
1998 Aug 10
DC characteristics
V
V
V
I
I
h
AC characteristics
C
f
G
F
SYMBOL
j
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C; unless otherwise specified.
re
UHF wideband transistor
UM
UM
is the maximum unilateral power gain, assuming s
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
noise figure
PARAMETER
I
I
V
V
I
I
I
I
I
T
I
T
f = 1 GHz
f = 2 GHz
C
C
E
C
C
C
C
C
C
S
S
CB
EB
amb
amb
= 10 A; I
= 100 A; I
= 100 A; I
= 5 mA; V
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
=
=
= 1 V; I
= 10 V; I
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
CB
4
; I
; I
12
CONDITIONS
C
C
= 6 V; f = 1 MHz
C
is zero.
C
CE
= 5 mA; V
= 5 mA; V
E
= 0
E
B
CE
CE
CE
CE
= 0
= 0
= 0
= 0
= 6 V
= 6 V
= 6 V; f = 1 GHz
= 6 V;
= 6 V;
G
UM
CE
CE
= 6 V;
= 6 V;
=
10
log
-------------------------------------------------------------- dB
20
10
1.5
50
1
MIN.
–
S
11
100
100
0.3
8
15
9.5
1.4
2
S
2
TYP.
21
Product specification
1
2
–
S
100
100
200
MAX.
PBR941
22
2
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
UNIT