PBR941,215 NXP Semiconductors, PBR941,215 Datasheet - Page 8

• Manufacturer Part Number: PBR941,215
• Description: TRANSISTOR NPN UHF 50MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBR941,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 360 mW
• Maximum Operating Frequency: 8000 MHz (Typ)
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1174-2; 934043060215; PBR941 T/R

Philips Semiconductors
APPLICATION INFORMATION
SPICE parameters for the PBR941 die
1998 Aug 10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
UHF wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER
0.466
150.4
1.000
53.06
180.0
57.30
2.000
27.68
1.000
1.976
9.943
1.420
1.000
12.14
0.000
4.957
0.597
1.988
0.000
1.110
3.000
0.568
600.0
0.412
2.037
30.90
3.148
131.8
0.000
205.8
296.2
0.118
0.104
0.000
0.000
700.0
0.000
0.943
VALUE
fA
V
mA
fA
V
mA
aA
eV
pF
mV
ps
V
mA
deg
fF
mV
ps
F
mV
A
UNIT
8
Notes
1. These parameters have not been extracted, the
2. C
List of components (see Fig.12)
39
40
41
42
handbook, halfpage
C
C
C
L1
L2
L3
L
L
SEQUENCE No.
B
E
be
cb
ce
(2)
(2)
QL
f
c
default values are shown.
capacitance to collector.
= scaling frequency = 1 GHz.
DESIGNATION
B
bpb
B
= 50; QL
Fig.12 Package equivalent circuit SOT23.
, C
C be
L1
bpe
E
; base-bondpad and emitter-bondpad
= 50; QL
L B
C
C
AF
KF
PARAMETER
B,E
bpb
bpe
(f) = QL
B'
7
80
80
0.35
0.17
0.35
0.40
0.83
C cb
E'
E
B,E
VALUE
L3
L E
C'
(f/f
c
);
Product specification
83.00
84.00
1.000
4 x 10
VALUE
fF
fF
fF
nH
nH
nH
nH
nH
PBR941
C
MBC964
16
L2
ce
UNIT
fF
fF
UNIT
C