BFR505,215 NXP Semiconductors, BFR505,215 Datasheet - Page 3

• Manufacturer Part Number: BFR505,215
• Description: TRANS NPN 15V 9GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR505,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1988-2; 934018740215; BFR505 T/R

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
9397 750 13396
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Table 7:
T
Symbol
V
V
V
I
P
T
T
Symbol
R
Symbol Parameter
I
h
C
C
C
f
G
C
CBO
T
j
S
FE
stg
j
CBO
CES
EBO
tot
th(j-s)
e
c
re
UM
= 25 C unless otherwise specified.
21
T
T
2
s
s
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector cut-off current I
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
Parameter
from junction to soldering point
Rev. 03 — 20 July 2004
Conditions
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 GHz
I
T
I
T
I
T
E
C
C
E
C
C
C
C
C
amb
amb
amb
= 0 A; V
= i
= 5 mA; V
= i
= i
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
e
c
c
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
= 0 A; V
= 0 A; V
= 0 A; V
Conditions
open emitter
R
continuous
up to T
BE
CB
CE
CE
CE
CE
CE
= 0
= 6 V
Conditions
EB
CB
CB
= 6 V
= 6 V;
= 6 V;
= 6 V;
= 6 V;
s
= 135 C
= 0.5 V;
= 6 V;
= 6 V;
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
[1]
Min
-
60
-
-
-
-
-
-
13
Min
-
-
-
-
-
-
65
[1]
Typ
260
Typ
-
120
0.4
0.4
0.3
9
17
10
14
Max
20
15
2.5
18
150
+150
175
BFR505
Max
50
250
-
-
-
-
-
-
-
Unit
K/W
Unit
V
V
V
mA
mW
C
C
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
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