BFR505,215 NXP Semiconductors, BFR505,215 Datasheet - Page 6

• Manufacturer Part Number: BFR505,215
• Description: TRANS NPN 15V 9GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR505,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1988-2; 934018740215; BFR505 T/R

Philips Semiconductors
9397 750 13396
Product data sheet
Fig 7. Gain as a function of frequency.
Fig 9. Minimum noise figure and associated available
F
gain
(dB)
(1) G
(2) MSG.
(3) G
(dB)
(1) f = 900 MHz.
(2) f = 1000 MHz.
(3) f = 2000 MHz.
(4) f = 2000 MHz.
(5) f = 1000 MHz.
(6) f = 900 MHz.
(7) f = 500 MHz.
min
50
40
30
20
10
0
5
4
3
2
1
0
10
V
V
gain as functions of collector current.
10
CE
CE
UM
max
1
.
= 6 V; I
= 6 V.
.
C
= 1.25 mA.
(6)
(7)
10
2
(2)
(1)
1
10
G
F
min
ass
I
3
C
(mA)
f (MHz)
(3)
mra766
mra726
(1)
(2)
(3)
(4)
(5)
10
10
Rev. 03 — 20 July 2004
4
20
15
10
5
0
5
G
(dB)
ass
Fig 8. Gain as a function of frequency.
Fig 10. Minimum noise figure and associated available
gain
(dB)
(1) G
(2) MSG.
(3) G
F
(dB)
(1) I
(2) I
(3) I
(4) I
min
50
40
30
20
10
0
5
4
3
2
1
0
V
V
gain as functions of frequency.
10
10
C
C
C
C
CE
CE
UM
max
= 5 mA.
= 1.25 mA.
= 5 mA.
= 1.25 mA.
2
= 6 V; I
.
= 6 V.
.
(3)
(4)
(2)
C
(1)
= 5 mA.
F
G
10
min
ass
NPN 9 GHz wideband transistor
2
(1)
(2)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
3
10
3
f (MHz)
f (MHz)
(3)
BFR505
mra767
mra727
10
10
4
4
20
15
10
5
0
5
G
(dB)
ass
6 of 13