BFT92,215 NXP Semiconductors, BFT92,215 Datasheet - Page 3

• Manufacturer Part Number: BFT92,215
• Description: TRANS PNP 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFT92,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 14mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 20 @ 14 mA @ 10 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 20
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1655-2; 933347730215; BFT92 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. T
November 1992
V
V
V
I
I
P
T
T
R
C
CM
stg
j
CBO
CEO
EBO
tot
PNP 5 GHz wideband transistor
SYMBOL
th j-s
SYMBOL
s
is the temperature at the soldering point of the collector tab.
thermal resistance from junction to
soldering point
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
open base
up to T
open emitter
open collector
f  1 MHz
3
up to T
CONDITIONS
s
= 95 C; note 1
CONDITIONS
s
= 95 C; note 1






65

MIN.
THERMAL RESISTANCE
20
15
2
25
35
300
150
175
Product specification
MAX.
260 K/W
BFT92
V
V
V
mA
mA
mW
C
C
UNIT