BFT92,215 NXP Semiconductors, BFT92,215 Datasheet - Page 4

• Manufacturer Part Number: BFT92,215
• Description: TRANS PNP 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFT92,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 14mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 20 @ 14 mA @ 10 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 20
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1655-2; 933347730215; BFT92 T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. d
November 1992
I
h
f
C
C
G
C
F
V
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
o
c
e
re
PNP 5 GHz wideband transistor
UM
V
V
V
measured at f
im
G
p
q
r
UM
= V
= V
= V
UM
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
o
o
o
=
6 dB; f
at d
6 dB; f
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
10
im
log
(pq-r)
= 60 dB; f
r
q
--------------------------------------------------------- - dB.

= 505.25 MHz;
1
= 503.25 MHz;
–
PARAMETER
= 493.25 MHz.
S
11
S
p
2
 1
21
= 495.25 MHz;

C
2
–
= 14 mA; V
S
22
2

CE
note 2
I
I
I
f = 500 MHz
I
I
I
I
f = 500 MHz; T
I
f = 500 MHz; T
= 10 V; R
E
C
C
E
C
C
C
C
= 0; V
= i
= 14 mA; V
= 14 mA; V
= i
= 2 mA; V
= 14 mA; V
= 5 mA; V
e
c
= 0; V
= 0; V
CB
4
12
L
= 10 V;
is zero and
CB
EB
CONDITIONS
= 75 ;
CE
CE
CE
CE
CE
amb
amb
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V;
= 10 V
= 10 V;
= 10 V;
= 25 C
= 25 C

20







MIN. TYP. MAX.

50
5
0.75 
0.8
0.7
18
2.5
150
Product specification
50







BFT92
nA
GHz
pF
pF
pF
dB
dB
mV
UNIT