BFG425W,115 NXP Semiconductors, BFG425W,115 Datasheet - Page 6

• Manufacturer Part Number: BFG425W,115
• Description: TRANS NPN 4.5V 25GHZ SOT-343R
• Manufacturer: NXP Semiconductors

Specifications of BFG425W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 20dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1644-2; 934047470115; BFG425W T/R

NXP Semiconductors
2010 Sep 15
handbook, halfpage
handbook, full pagewidth
NPN 25 GHz wideband transistor
V
Fig.7
I
C
CE
gain
(dB)
= 25 mA; V
= 2 V; f = 2 GHz.
30
20
10
0
0
Gain as a function of collector current;
typical values.
CE
MSG
= 2 V; Z
10
o
= 50 
Fig.9 Common emitter input reflection coefficient (S
20
180°
G max
0
−135°
135°
30
0.2
0.2
I C (mA)
0.2
MGG686
0.5
0.5
40
0.5
3 GHz
−90°
90°
6
1
1
1
handbook, halfpage
I
C
gain
(dB)
= 25 mA; V
40 MHz
2
50
40
30
20
10
Fig.8
0
10
2
2
CE
5
11
Gain as a function of frequency;
typical values.
= 2 V.
); typical values.
−45°
45°
5
5
10
MGG689
S 21
MSG
2
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
10
3
Product specification
G max
BFG425W
f (MHz)
MGG687
10
4