BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 5

TRANS NPN 70MA 15V 9GHZ SOT343N

BFG520W/X,115

Manufacturer Part Number
BFG520W/X,115
Description
TRANS NPN 70MA 15V 9GHZ SOT343N
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BFG520W/X,115

Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
2.5V
Collector Current (dc) (max)
70mA
Dc Current Gain (min)
60
Frequency (max)
9GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1645-2
934030650115
BFG520W/X T/R
Philips Semiconductors
1998 Oct 15
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistors
V
V
(GHz)
CE
CE =
Fig.3
f
T
h FE
= 8 V.
250
200
150
100
Fig.5
50
4 V; f = 1 GHz.
0
8
6
4
2
0
10
10
2
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
10
1
1
I
C
(mA)
10
I C (mA)
MRA749
MLC058
10
10
2
2
5
handbook, halfpage
I
C
(pF)
= 0; f = 1 MHz.
C re
Fig.4
1.2
0.8
0.4
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
2
BFG590W; BFG590W/X
4
6
Product specification
8
V
CB
MLC057
(V)
10

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