BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 7

• Manufacturer Part Number: BFG520W/X,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1645-2; 934030650115; BFG520W/X T/R

Philips Semiconductors
1998 Oct 15
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistors
I
I
C
C
= 80 mA; V
= 80 mA; V
CE
CE
= 4 V; Z
= 4 V.
Fig.11 Common emitter forward transmission coefficient (S
o
= 50
Fig.10 Common emitter input reflection coefficient (S
180
180
o
o
50
0
135
135
135
135
0.2
0.2
40
40 MHz
o
o
o
o
0.2
30
0.5
0.5
3 GHz
20
0.5
10
90
90
90
90
1
7
1
1
o
o
o
o
3 GHz
40 MHz
2
2
2
5
11
45
45
45
45
); typical values.
BFG590W; BFG590W/X
o
21
o
o
o
5
5
MLC064
); typical values.
MLC063
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification