BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 12

• Manufacturer Part Number: BFG480W,115
• Description: TRANS NPN 4.5V 21GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 80mA @ 2V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 23000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1982-2; 934055055115; BFG480W T/R

NXP Semiconductors
1998 Oct 21
handbook, full pagewidth
NPN wideband transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.19 Printed-circuit board and component layout for 2 GHz class-AB test circuit in Fig.18.
input
C1
TR1
R2
C3
R1
C2
V C
L1
L2
DUT
12
45
L4
L3
V S
R3
L5
C6
C4
C7
output
C5
MBK827
35
Product specification
BFG480W