NE664M04-A CEL, NE664M04-A Datasheet - Page 10

• Manufacturer Part Number: NE664M04-A
• Description: TRANSISTOR NPN 1.8GHZ M04
• Manufacturer: CEL

Specifications of NE664M04-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 20GHz
• Gain: 12dB
• Power - Max: 735mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 100mA, 3V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 0.735 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant