NE664M04-A CEL, NE664M04-A Datasheet - Page 2

• Manufacturer Part Number: NE664M04-A
• Description: TRANSISTOR NPN 1.8GHZ M04
• Manufacturer: CEL

Specifications of NE664M04-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 20GHz
• Gain: 12dB
• Power - Max: 735mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 100mA, 3V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 0.735 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
APPLICATIONS
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
T
J
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PARAMETERS
Bluetooth Power Class 1
f = 2.4 GHz
SS Cordless Phone
f = 2.4 GHz
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
Cordless Phone
f = 0.9 GHz
2
0 dBm
5 dBm
ñ3 dBm
UNITS
mW
mA
°C
°C
V
V
V
1
(3-pin TUSMM)
(T
-65 to +150
NE663M04
NE678M04
RATINGS
NE68019
A
= 25°C)
500
735
150
5.0
1.5
13
20 dBm
13 dBm
16 dBm
9 dBm
NE664M04
NE664M04
NE664M04
NE664M04
ORDERING INFORMATION
THERMAL RESISTANCE
Note:
1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
2. Stand alone device in free air.
PART NUMBER
NE664M04-T2-A
SYMBOLS
R
R
th j-a
th j-a
25 dBm
1
2
Junction to Ambient Resistance
Junction to Ambient Resistance
22 dBm
26 dBm
25 dBm
NE5520379A
(MOS FET)
QUANTITY
3k pcs./reel
PARAMETERS
35 dBm
1
2
UNITS RATINGS
°C/W
°C/W
170
570