NE664M04-A CEL, NE664M04-A Datasheet - Page 3

• Manufacturer Part Number: NE664M04-A
• Description: TRANSISTOR NPN 1.8GHZ M04
• Manufacturer: CEL

Specifications of NE664M04-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 20GHz
• Gain: 12dB
• Power - Max: 735mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 100mA, 3V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 0.735 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
0.001
1000
1000
1000
0.01
800
600
400
200
100
735
100
205
0.1
10
10
1
0.5
0
1
Mounted on Polyimide PCB
(38 x 38 mm, t = 0.4 mm)
Stand alone device
in free air
V
TOTAL POWER DISSIPATION vs.
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
Ambient Temperature, T
COLLECTOR CURRENT vs.
= 3 V
25
AMBIENT TEMPERATURE
0.6
Collector Current, I
COLLECTOR CURRENT
DC CURRENT GAIN vs.
10
50
0.7
75
0.8
100
100
C
(mA)
A
BE
(ºC)
0.9
V
125
CE
(V)
= 3 V
1000
150
1.0
(T
A
= 25°C)
450
400
350
300
250
200
150
100
2.0
1.5
1.0
0.5
50
REVERSE TRANSFER CAPACITANCE vs.
0
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
COLLECTOR CURRENT vs.
1
1
2
7 mA
6 mA
2
5 mA
3
4 mA
3
3 mA
4
I
B
: 0.5 mA step
f = 1 MHz
I
B
CB
= 0.5 mA
4
CE
2 mA
5
(V)
1 mA
(V)
5
6