BFM505,115 NXP Semiconductors, BFM505,115 Datasheet - Page 7

• Manufacturer Part Number: BFM505,115
• Description: TRANS NPN DUAL 8V 9GHZ SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM505,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 2
• Collector-emitter Voltage: 8V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 18mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934041400115; BFM505 T/R; BFM505 T/R

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
V
Fig.10 Minimum noise figure as a function of
V
Fig.12 Minimum noise figure as a function of
CE
CE
(dB)
(dB)
F
F
= 3 V.
= 3 V.
5
4
3
2
1
0
5
4
3
2
0
1
10
10
−1
2
collector current; typical values.
frequency; typical values.
1.25 mA
5 mA
2000 MHz
1000 MHz
900 MHz
500 MHz
10
1
3
I C (mA)
f (MHz)
MGC766
MGC768
10
10
4
7
handbook, halfpage
V
handbook, halfpage
Fig.11 Associated available gain as a function of
V
Fig.13 Associated available gain as a function of
G ass
CE
(dB)
G ass
CE
(dB)
= 3 V.
= 3 V.
20
15
10
−5
20
15
10
−5
0
5
0
5
10
10
collector current; typical values.
frequency; typical values.
−1
2
I C = 1.25 mA
5 mA
10
1
3
f = 900 MHz
2 GHz
1GHz
Product specification
I C (mA)
f (MHz)
BFM505
MGD686
MGC769
10
10
4