BFM505,115 NXP Semiconductors, BFM505,115 Datasheet - Page 8

• Manufacturer Part Number: BFM505,115
• Description: TRANS NPN DUAL 8V 9GHZ SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM505,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 2
• Collector-emitter Voltage: 8V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 18mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934041400115; BFM505 T/R; BFM505 T/R

NXP Semiconductors
APPLICATION INFORMATION
SPICE parameters for any single BFM505 die
Note
1. These parameters have not been extracted,
1996 Oct 08
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
Dual NPN wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
the default values are shown.
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER VALUE
134.1
180.0
0.988
38.34
150.0
27.81
2.051
55.19
0.982
2.459
2.920
17.45
1.062
20.00
1.000
20.00
1.171
4.350
0.000
1.110
3.000
284.7
600.0
0.303
7.037
12.34
1.701
30.64
0.000
242.4
188.6
0.041
0.130
1.332
0.000
750.0
0.000
0.897
aA


V
mA
fA



V
mA
aA


A




eV

fF
mV

ps

V
mA
deg
fF
mV


ns
F
mV


UNIT
8
handbook, halfpage
Fig.14 Package equivalent circuit SOT363A
Fig.15 Package capacitance (fF) between
B1
C2
C1
E2
E1
B2
(inductance only).
indicated nodes.
Lead inductances (nH)
LB
27
48
B1
3
1
3
LB
LE
LP
LP
LE
27
17
36
E2
6
C1
E1
T1
0.4
0.6
1.0
36
17
E1
3
T2
C2
E2
48
B2
3
LP
LE
Product specification
C2
6
LB
BFM505
MBG188
MBG189
B2