BFR 750L3RH E6327 Infineon Technologies, BFR 750L3RH E6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 750L3RH E6327
• Description: TRANS RF BIPO NPN 90MA TSLP-3-9
• Manufacturer: Infineon Technologies

Specifications of BFR 750L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 37GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 60mA, 3V
• Current - Collector (ic) (max): 90mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR750L3RHE6327INTR; BFR750L3RHE6327XT; SP000252588

IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
Lbb_pack
2.66 e-12
95
1.8
1.33
2
0.9
0.475
0.0021
2540
0.45
1.2
0.25
0.436
1
Cbe_pack
Lbb_chip
Ccb_chip
Ree_chip
Lee_pack
Transistor
Model
Cbc_chip
mA
V
-
V
-
pF
ns
mA
V
ns
-
-
-
Rbc_chip
B
C
E
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
Lcc_chip
Cce_chip
753
292
76
1.33
1
20
0.69
3
0.5
0.31
0.325
-2.2
0.5
0
Cce_pack
4
Lcc_pack
m
-
mA
-
mA
V
-
pF
-
-
L
L
L
L
L
C
C
C
C
C
R
R
Valid up to 6GHz
bb_chip
cc_chip
bb_pack
cc_pack
ee_pack
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
bc_chip
cb_chip
ce_chip
be_pack
ce_pack
bc_chip
ee chip
=
=
=
=
=
=
=
=
=
=
=
=
1.015
1.54 e-11
1
1 e-27
1 e15
0.9
0.085
2.1
0.173
0.01
0.65
1.11
25
0.212
0.07472
0.0184
0.277
0.239
0.015
0.013
0.282
0.064
0.0492
7
0.566
BFR750L3RH
2007-04-26
-
mA
-
mA
A
-
V
pF
-
V
°C
nA
nH
nH
nH
nH
pF
pF
pF
pF
pF