BFR 750L3RH E6327 Infineon Technologies, BFR 750L3RH E6327 Datasheet - Page 6

• Manufacturer Part Number: BFR 750L3RH E6327
• Description: TRANS RF BIPO NPN 90MA TSLP-3-9
• Manufacturer: Infineon Technologies

Specifications of BFR 750L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 37GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 60mA, 3V
• Current - Collector (ic) (max): 90mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR750L3RHE6327INTR; BFR750L3RHE6327XT; SP000252588

Transition frequency f
V
Power gain G
V
f = parameter
CE
CE
45
40
35
30
25
20
15
10
28
26
24
22
20
18
16
14
12
10
= parameter, f = 1 GHz
= 3 V
5
0
8
0
0
10
10
20
20
ma
, G
30
30
ms
I
I
C
C
[mA]
[mA]
40
40
=
T
=
( I
50
50
C
( I
)
C
60
60
)
2V to 4V
70
70
1.00V
0.75V
0.50V
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
80
80
6
Power gain G
V
Power gain G
I
f = parameter
C
CE
= 60 mA
40
35
30
25
20
15
10
27
24
21
18
15
12
= 3 V, I
5
0
9
6
3
0
0
0
0.5
1
C
1
= 60 mA
ma
ma
1.5
, G
, G
2
|S
2
ms
21
ms
G
|
2
f [GHz]
ms
V
CE
2.5
3
=
=
[V]
3
BFR750L3RH
( f )
( V
4
CE
3.5
)
2007-04-26
4
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
5
4.5
6
5