BFR 705L3RH E6327 Infineon Technologies, BFR 705L3RH E6327 Datasheet
BFR 705L3RH E6327
Specifications of BFR 705L3RH E6327
BFR705L3RHE6327XT
SP000252590
Related parts for BFR 705L3RH E6327
BFR 705L3RH E6327 Summary of contents
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NPN Silicon Germanium RF Transistor* High gain ultra low noise RF transistor for low current operation Ideal for low power consumption LNA design Provides outstanding performance for a wide range of wireless applications GHz and more Outstanding ...
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Maximum Ratings Parameter Collector-emitter voltage T > 0° 0°C A Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation , T Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 2) Junction - ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...
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Total power dissipation [°C] S Permissible Pulse Load totmax totDC D=t ...
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Transition frequency parameter GHz [mA] C Power gain ...
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Package Outline Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.6 0.225 0.15 Copper Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...