BFR 705L3RH E6327 Infineon Technologies, BFR 705L3RH E6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 705L3RH E6327
• Description: TRANS RF BIPO NPN 10MA TSLP-3-9
• Manufacturer: Infineon Technologies

Specifications of BFR 705L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 39GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
• Gain: 25dB
• Power - Max: 40mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 7mA, 3V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR705L3RHE6327INTR; BFR705L3RHE6327XT; SP000252590

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
I
Power gain, maximum stable
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1.8 GHz
f = 6 GHz
1
C
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 ), G ms = | S 21e / S 12e |
L
L
CB
CE
EB
= 7 mA, V
= 3 mA, V
= 3 mA, V
= 7 mA, V
= 7 mA, V
= 7 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
Lopt
Lopt
, f = 6 GHz
, f = 1.8 GHz
CE
CE
CE
CE
CE
CE
= 3 V, f = 1 GHz
= 3 V, f = 1.8 GHz, Z
= 3 V, f = 6 GHz, Z
= 3 V, Z
= 3 V, Z
= 3 V, Z
BE
BE
S
S
S
CB
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
1)
Sopt
Sopt
L
= 50
A
1)
,
,
= 25°C, unless otherwise specified
S
S
= Z
,
= Z
Sopt
Sopt
3
Symbol
f
C
C
C
F
G
G
|S
T
cb
ce
eb
ms
ma
21e
|
2
min.
-
-
-
-
-
-
-
-
-
-
Values
0.04
0.15
0.18
typ.
0.5
0.8
39
25
18
21
14
BFR705L3RH
max.
0.08
2007-03-30
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dB
dB