MPSH11_D27Z Fairchild Semiconductor, MPSH11_D27Z Datasheet
MPSH11_D27Z
Specifications of MPSH11_D27Z
Related parts for MPSH11_D27Z
MPSH11_D27Z Summary of contents
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... Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2002 Fairchild Semiconductor Corporation MMBTH11 C TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted MPSH11 350 2 ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Sustaining Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation ...
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Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1 0 °C 25 0.6 125 ° C 0.4 0.2 0 COLLE CTOR CURRENT ( mA) C Collector Cut-Off Current vs Ambient Temperature 30V ...
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Common Emitter Y Parameters Input Admittance vs Collector Current 15V MHz COLLECTOR CURRENT (mA) C Input Admittance vs ...
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Common Emitter Y Parameters Forward Transfer Admittance vs Collector Voltage 140 MHz g 120 fe 100 COLLECTOR VOLTAGE (V) ...
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Common Emitter Y Parameters Output Admittance vs Collector Current 1000 100 COLLECTOR CURRENT (mA) C Output Admittance vs Collector Voltage 10000 1000 100 ...
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Test Circuits 100 pF 200 mHz Input L1 1000 pF 2 FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit 270 1000 pF 1000 0.8-10 pF ...
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Test Circuits (continued) 0.002 F 50 Input 2.2 K 1/2 W 1000 pF R.F. Beads V AGC FIGURE 2: 45 MHz Power Gain Circuit 200 mHz Output into 50 300 2 245 mHz Input ...