BFS25A,115 NXP Semiconductors, BFS25A,115 Datasheet - Page 4

• Manufacturer Part Number: BFS25A,115
• Description: TRANS NPN 5V 6.5MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS25A,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021360115; BFS25A T/R; BFS25A T/R

NXP Semiconductors
December 1997
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
(mW)
P tot
I
Fig.4
C
C re
(pF)
= 0; f = 1 MHz.
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
1
50
2
100
3
150
4
T s ( o C)
MRC038 - 1
V
CB
MRC031
(V)
200
5
4
handbook, halfpage
handbook, halfpage
V
Fig.3
f = 1 GHz; T
Fig.5
h FE
CE
(GHz)
f T
100
= 1 V; T
80
60
40
20
10
10
0
8
6
4
2
0
0
−3
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
= 25 C.
0.5
10
−2
1
10
−1
1.5
Product specification
V
CE
1
I C (mA)
= 3 V
2
I C (mA)
BFS25A
1 V
MRC032
MRC037
10
2.5