BFS25A,115 NXP Semiconductors, BFS25A,115 Datasheet - Page 5

TRANS NPN 5V 6.5MA SOT323

BFS25A,115

Manufacturer Part Number
BFS25A,115
Description
TRANS NPN 5V 6.5MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFS25A,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
1.8dB ~ 2dB @ 1GHz
Power - Max
32mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 500µA, 1V
Current - Collector (ic) (max)
6.5mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Dc Current Gain Hfe Max
50 @ 0.5mA @ 1V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
5 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
6.5 mA
Power Dissipation
32 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934021360115
BFS25A T/R
BFS25A T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS25A,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
In Figs 7 to 9, G
MSG = maximum stable gain; G
gain.
December 1997
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
V
I
gain
C
(dB)
CE
gain
(dB)
= 0.5 mA; V
Fig.6 Gain as a function of collector current.
= 1 V; f = 500 MHz; T
25
20
15
10
50
40
30
20
10
5
0
0
0.01
0
Fig.8 Gain as a function of frequency.
CE
UM
= 1 V; T
0.5
= maximum unilateral power gain;
0.1
amb
amb
G UM
MSG
1
= 25 C.
= 25 C.
G UM
MSG
max
1.5
1
= maximum available
f (GHz)
2
I C (mA)
G max
MRC034
MRC035
10
2.5
5
handbook, halfpage
handbook, halfpage
Fig.7
I
f = 1 GHz; T
C
G UM
(dB)
gain
(dB)
= 1 mA; V
50
40
30
20
10
20
16
12
0
10
8
4
0
0
Fig.9 Gain as a function of frequency.
−2
Maximum unilateral power gain as a
function of collector current.
amb
CE
= 1 V; T
= 25 C.
0.5
G UM
MSG
10
amb
−1
= 25 C.
1
1.5
1
V
Product specification
CE
f (GHz)
= 3 V
2
I C (mA)
G max
1 V
BFS25A
MRC033
MRC036
2.5
10

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